• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    Apparatus (100) for processing a substrate, comprising: - at least one vacuum chamber (10) in which a defined gas pressure is adjustable; a heating device for heating the substrate; and - a laser device (20) arranged outside the vacuum chamber (10), wherein the laser device (20) is movable relative to the substrate, wherein at least one cavity of the substrate which can be arranged in the vacuum chamber (10) is melted by means of the laser device (20) Substrate material is closable.
    公开号:AT516786A2
    申请号:T50065/2016
    申请日:2016-02-04
    公开日:2016-08-15
    发明作者:Frank Reichenbach；Jochen Reinmuth；Philip Kappe；Jürgen Butz；Jens Frey；Mawuli Ametowobla；Julia Amthor
    申请人:Bosch Gmbh Robert；
    IPC主号:
    专利说明:

    description
    title
    Device for processing a substrate
    The invention relates to a device for processing a substrate.
    State of the art
    In the prior art laser processing systems are known in which a substrate to be processed is rinsed during processing with desired gases in an open system. Flushing with gases may serve to cool the substrate or remove process products. DE 42 38 826 C1 discloses a device for irradiating a substrate with a two-chamber system, wherein a Si substrate is annealed under ultrahigh vacuum. A laser source is arranged outside the device, the Si substrate to be processed is located in a first vacuum chamber, movable mirrors for changing a position of laser radiation relative to the Si substrate are located in a second vacuum chamber. Through two windows, laser radiation impinges externally on the Si substrate arranged in the first vacuum chamber. For the fabrication of thin film transistors (TFTs), the use of laser fuses is known. In TFTs, polycrystalline silicon forms the active layer formed by heating and crystallizing an amorphous silicon layer as the starting material. Because of the use of glass as the low melting point substrate material, low temperature stress methods of the substrate such as laser reflow are preferred.
    US 6 797 651 B2 describes a method and apparatus for laser reflowing silicon for producing smooth surface polycrystalline silicon layers. For this purpose, the laser melting is carried out in a vacuum chamber under a pressure between 1.3 × 103 Pa and 1.3 Pa. As a result, polycrystalline silicon layers with a low surface roughness can be produced. In the apparatus, focused laser light is directed through a chamber window at an object within the chamber. The chamber contains an inert gas supply, a vacuum generating pump and a pressure control to control the said pressure range. The inert gases used are selected from the group nitrogen (N2), argon and neon.
    Disclosure of the invention
    It is an object of the present invention to provide an improved apparatus for processing a substrate.
    The object is achieved according to a first aspect with a device for processing a substrate, comprising: at least one vacuum chamber in which a defined gas pressure can be set; a heating device for heating the substrate; and - a laser device arranged outside the vacuum chamber, wherein the laser device is movable relative to the substrate, wherein by means of the laser device at least one cavern of the substrate can be arranged in the vacuum chamber by melting of substrate material is closable.
    In this way, a combination of a heatable vacuum processing chamber with a laser processing device is provided, by means of which a hermetic sealing of access openings in the substrate under a precisely defined ambient pressure is made possible. As a result, MEMS elements can be produced with precisely defined cavity internal pressures.
    Advantageous developments of the device are the subject of the dependent claims.
    An advantageous development of the device is characterized in that the heating device is arranged in the vacuum chamber. In this way, a space-saving combination of vacuum chamber and heater can be provided.
    A further advantageous development of the device is characterized in that the heating device is arranged in a separate heating chamber. In this way, more heating power can be provided, thereby optionally a larger number of substrates can be baked.
    A further advantageous development of the device is characterized in that by means of the heating device, one or more substrates are bakeable at the same time. In this way, an efficient and time-saving processing of the substrates is possible.
    A further advantageous development of the device is characterized in that it further comprises a holding device for holding the substrate.
    In this way, a high adjustment or positioning accuracy of the substrate can be realized relative to the laser device.
    Further advantageous developments of the device are characterized in that the holding device is designed as a mechanical holding device, a vacuum holding device or an electrostatic holding device. In this way, different technical possibilities for the holding device are provided with which different fixing concepts for the substrate can be realized.
    A further advantageous development of the device provides that the laser device is designed as a laser in the near infrared range. This provides an efficient way of laser-fusing substrate material for the purpose of closing access openings in caverns.
    Further advantageous developments of the device provide that the laser device is designed as a pulsed laser or as a continuous wave laser. As a result, the method of closing caverns of MEMS elements is advantageously feasible with different types of lasers.
    A further advantageous development of the device is characterized in that a wavelength range of the laser device is preferably between about 1000 nm and about 1100 nm, more preferably between about 1060 nm and about 1080 nm.
    A further advantageous development of the device is characterized in that it further comprises a cooling device for cooling the substrate. As a result, a defined temperature of the substrate optimized for laser processing can be realized. Closing the caverns at different defined temperatures is thereby made possible.
    A further advantageous development of the device is characterized in that it further comprises a transfer device, by means of which the substrate can be transferred between the various devices. This assists in automated localized displacement of the substrate between individual devices and chambers of the device, thereby promoting efficient fabrication of MEMS elements from the substrate.
    A further advantageous development of the device is characterized in that the substrate material is silicon.
    The invention will be described below with further features and advantages with reference to several figures in detail. In this case, all the features described, regardless of their representation in the description and in the figures, as well as regardless of their relationship in the claims the subject of the invention. Same or functionally identical elements have the same reference numerals.
    In the figures shows:
    Fig. 1 is a cross-sectional view of an apparatus for processing a
    substrate;
    Fig. 2 is a cross-sectional view of another device for
    Processing a substrate;
    Fig. 3 is a cross-sectional view of another device for
    Processing a substrate;
    Fig. 4 is a plan view of another device for processing a
    substrate; and
    5 shows a basic sequence of a method for processing a
    Substrate.
    Description of embodiments
    A micromechanical device (MEMS) may comprise a first micromechanical sensor element (e.g., a yaw rate sensor) and a second micromechanical sensor element (e.g., an acceleration sensor). Bonding material may be used to form a cap element in the form of a cap wafer, preferably made of silicon, which realizes a bond connection together with the MEMS element. A cavern can be formed above the first sensor element, in which a defined internal pressure is enclosed. For a high-quality rotation rate sensor, a very low internal pressure is required for this.
    Also above the second sensor element, a cavern can be arranged, in which a defined pressure is included. The two mentioned sensor elements can be arranged spatially separated from each other under the common cap element and realize in this way a cost-effective, space-saving micromechanical component with a yaw rate sensor and an acceleration sensor.
    With the invention, a device is proposed, with which one of said micromechanical components can be manufactured from a substrate.
    1 shows a cross-sectional view of a first embodiment of a device 100 for processing a substrate for producing a MEMS device.
    Element. The apparatus 100 includes a vacuum chamber 10 having an optical window 13 tuned to the wavelength of a laser device 20 through which the externally located laser device 20 can focus into the vacuum chamber 10 and thereby cause a reflow of substrate material (eg, silicon, glass) an access opening can be closed in a cavern of the substrate. The melting of the silicon is advantageously carried out at a pressure of less than about 100 Pa. The laser device 20 may be formed as a pulsed laser or as a CW laser in the near infrared region.
    In the vacuum chamber 10, a holding device 30 is further arranged, by means of which the substrate (not shown) can be held or fixed. By means of the holding device 30 further bending of the substrate (English, waferbow) can be compensated. The holding device 30 can realize, for example, an electrostatic, mechanical or vacuum clamping. A first positioner 31 is provided for the substrate to adjust a position and orientation of the substrate relative to a coordinate system of the apparatus 100.
    For this purpose, the substrate can be moved over an x / y table under a stationary laser optic and can be positioned relative to the laser device 20 with a positioning accuracy in the range of +/- 10 pm and less. Alternatively, the laser beam of the laser device 20 can be guided over the substrate by means of scanning optics (not shown). Alternatively, the laser beam of the laser device 20 can also be moved over the fixed substrate by means of movable mirrors (not shown) ("flying optics"). The adjustment of the laser beam of the laser device 20 relative to the substrate can alternatively take place via a camera with image processing (not shown). For a higher positioning accuracy with a simultaneously high traversing speed, a combination of x / y table or turntable and a scanning optics can be provided.
    In the vacuum chamber 10, a vacuum port 11 and a gas port 12 for setting a defined pressure within the vacuum chamber 10 may be provided. Furthermore, the vacuum chamber 10 may include a vacuum lock 14, which allows a vacuum suitable loading and unloading of the vacuum chamber 10.
    The holding device 30 is for heating the substrate by means of a heater (not shown) heated, preferably in a range of about 100 ° C to about 500 ° C and preferably regulated. By means of the heatable holding device 30, the substrate material can be baked out or dried or evaporated before the laser sealing process. In this way, the substrate can be pretreated in a defined manner, whereby after closing a defined internal pressure can be well maintained. For this purpose, it may also be favorable that the vacuum chamber 10 is vented and pumped (English, pump-and-purge process), so that in this way an improved cleaning process of the substrate material is supported.
    To close the access openings in the caverns, the silicon of the micromechanical device is melted locally limited. For the melting of the silicon, a continuous wave laser (CW laser) in the near infrared range may preferably be provided. It is advantageous to use an IR laser (infrared laser) with a wavelength of about> 500 nm to close the access openings under a defined atmosphere. The infrared radiation of such lasers penetrates particularly deep into the silicon substrate and thereby enables a particularly deep and reliable closure of the access openings.
    Furthermore, it may be advantageous to provide a laser device 20 with a pulsed laser having a pulse length of less than about 100 ps with an average power over pulse and pause times of less than 60 kW in order to advantageously minimize the thermal load on the MEMS structures hold.
    Optionally, the apparatus 100 may include another laser chamber (not shown) in which the accesses to the MEMS caverns are created by laser drilling (not shown).
    FIG. 2 shows a further variant of a device 100 for processing a substrate. In this case, the laser device 20 comprises a second one
    Positioning device 21 for the laser device 20, by means of which the laser device 20 can be positioned relative to the substrate in the vacuum chamber 10. In this case, a positioning device 31 for the holding device 30 is not required.
    It can also be favorable to apply more than one MEMS structure in at least two hermetically separated caverns and to close at least one of the caverns with a laser pulse of the laser device 20. Different pressures can be set in the caverns. Either the pressure confinement in the first cavern can be defined by the bonding process and in the second cavern by the laser closure process. Alternatively, the different internal pressures in the caverns can each be realized by a laser shutter. Conveniently, at least one respective acceleration sensor or a yaw rate sensor or a magnetic field sensor or a pressure sensor are arranged in the two separate caverns.
    Optionally, an upstream, separate heating chamber 50 and a transport of the MEMS components under defined atmosphere or vacuum conditions can be provided for the device 100. Due to the precise pressure control and the possibility of connecting different gases to the vacuum chamber 10, different cavity internal pressures and gas atmospheres can be set on a MEMS chip with different, separate caverns. By allowing the separate heating chamber 50 additional annealing of the MEMS element before closing an increase in pressure after closure by outgassing can be even better avoided.
    Another advantage of the separate heating chamber 50 is that the overall throughput of the machine is increased. Vacuum barriers 14 between chambers 10, 50, and 70 can be used to separately set and control the various process requirements of chambers 10, 50, and 70 (e.g., temperature, time, pressure parameters).
    3 shows a cross-sectional view of such a modified device 100. The upstream, separate heating chamber 50 can accommodate one or more substrates, wherein the heating under vacuum, under a defined atmosphere or by pumping and purging cycles (engl., Pump and purge) can be done. The upstream heating chamber 50 may also have a vacuum port 11 and a gas port 12 for setting a defined atmosphere within the heating chamber 50.
    Above all, the heating chamber 50 serves to allow targeted outgassing of the surfaces of the substrate in order to remove adsorbed species from the surface of the substrate under the action of temperature and with the aid of process gases. This is necessary to achieve a stable internal pressure over a lifetime of the micromechanical device. In this case, a transfer of the substrate from the heating chamber 50 to the vacuum chamber 10 under vacuum (or inert gas) is to be ensured. For this purpose, an additional transfer device 60 is provided.
    Optionally, the apparatus 100 may include a cooling chamber 70 to cool the substrate after being heated to handling temperature. By means of the cooling chamber 70, the substrate can be brought in this way to a defined temperature, to be subsequently closed in the vacuum chamber 10 by laser melting.
    The plant, in the presence of multiple chambers, may include an automated transfer device 60 which may be formed with a substrate handler 61 for transferring the substrate between the various chambers of the device 100.
    FIG. 4 shows a plan view of such a modified device 100. A centrally arranged transfer device 60, by means of which the substrate can be displaced into and between the individual chambers 10, 50, 70, can be seen. Between the transfer device 60 and the chambers 10, 50 and 70, a vacuum lock 14 may be provided in each case.
    FIG. 4 shows in principle a sequence of a method for operating the device 100.
    In a first step 200, a loading of the substrate into the vacuum chamber 10 is performed.
    In a step 210, a vacuum is set within the vacuum chamber 10.
    In a step 220, an alignment of the substrate with respect to the laser device 20 is performed.
    In a step 230, an access opening of a cavern of a MEMS element is positioned relative to the laser device 20.
    In a step 240, the substrate is processed with the laser device 20 for the purpose of closing access openings in caverns of the substrate.
    In a step 250, a discharge of the substrate from the vacuum chamber 10 of the device 100 is performed.
    If appropriate, steps 230 and 240 can be carried out several times in succession until all caverns on the substrate are closed, as indicated by a backward arrow.
    It goes without saying that a variety of modifications of the method is conceivable, the individual processing steps and their sequences in the individual chambers are suitably adapted as required.
    In summary, the present invention provides a device with which it is advantageously possible to provide a production of MEMS elements by closing an access opening in a cavern by means of a laser beam. By a combination of a heatable vacuum process chamber with a laser, an efficient production of said components can be carried out in this way.
    Although the device according to the invention has been disclosed above by means of concrete embodiments, it is by no means limited thereto. The person skilled in the art will thus recognize that the device can be implemented in a large number of modifications which are not or only partially disclosed previously. He will thus be able to suitably modify or combine the described features without deviating from the gist of the invention.
    权利要求:
    Claims (10)
    [1]
    Ϊ <ΜυΑ- claims
    A device (100) for processing a substrate, comprising: - at least one vacuum chamber (10) in which a defined gas pressure is adjustable; a heating device for heating the substrate; and - a laser device (20) arranged outside the vacuum chamber (10), wherein the laser device (20) is movable relative to the substrate, wherein by means of the laser device (20) at least one cavity of the substrate which can be arranged in the vacuum chamber (10) is melted by substrate material is closable.
    [2]
    2. Device (100) according to claim 1, characterized in that the heating device in the vacuum chamber (10) is arranged.
    [3]
    3. Device (100) according to claim 1, characterized in that the heating device is arranged in a separate heating chamber (50).
    [4]
    4. Device (100) according to any one of claims 1 to 3, characterized in that by means of the heating means, a substrate or a plurality of substrates are bakeable at the same time.
    [5]
    5. Device (100) according to one of the preceding claims, further comprising a holding device (30) for holding the substrate.
    [6]
    6. Device (100) according to claim 5, characterized in that the holding device (30) is designed as a mechanical holding device, a vacuum holding device or an electrostatic holding device.
    [7]
    7. Device (100) according to one of the preceding claims, characterized in that the laser device (20) is designed as a laser in the near IR range.
    [8]
    The apparatus (100) of any one of the preceding claims, further comprising cooling means (70) for cooling the substrate.
    [9]
    9. Device (100) according to one of claims 3 to 8, further comprising a transfer device (60), by means of which the substrate between the various devices (10, 50, 70) is transferable under a defined atmosphere.
    [10]
    10. Use of the device (100) according to any one of the preceding claims for producing a micromechanical device from the substrate.
    类似技术:
    公开号 | 公开日 | 专利标题
    DE102014202801A1|2015-08-20|Method for producing a micromechanical component
    DE102008037663A1|2009-04-02|Structure of a pulse laser annealing system
    EP3024616B1|2019-04-10|Method and device for separating a flat workpiece into multiple parts
    EP3103135B1|2021-05-12|Method and device for bonding substrates
    KR20050052477A|2005-06-02|Process and system for laser crystallization processing of film regions on a substrate to provide substantial uniformity, and a structure of such film regions
    US20070224768A1|2007-09-27|Method and apparatus for delivery of pulsed laser radiation
    DE10208450A1|2003-09-11|Chamber for producing layer of material on sections of substrate surface, used for atomic layer and chemical vapor deposition, has heating source formed as radiation source by which temperature on substrate surface can be changed in steps
    EP3127141B1|2021-03-24|Method for the surface cleaning of substrates
    AT516786B1|2021-05-15|Device for processing a substrate
    DE102017213070A1|2019-01-31|Method of fabricating a MEMS mirror assembly and MEMS mirror assembly
    DE102015224495A1|2017-06-08|Laser beam deflection for targeted energy deposition
    EP2360291A1|2011-08-24|Method and device for quick heating and cooling of a substrate and immediatelycoating same in a vacuum
    DE102016200497A1|2017-07-20|Method for producing a micromechanical component
    DE102009050680B4|2019-02-07|Method and apparatus for crystallizing an amorphous semiconductor layer with a laser beam
    DE19539392A1|1997-04-17|Fluxless soldering esp. flip-chip bonding apparatus
    DE102016203714A1|2016-04-28|Optical arrangement for lithography, in particular projection exposure apparatus
    EP3017462B1|2017-09-13|Method and device for treating asubstrate surface
    EP3459656A1|2019-03-27|Method and device for additive production of a component
    EP0410401A1|1991-01-30|Method for coating a surface of a substrate
    EP3061127A1|2016-08-31|Multi-magnet arrangement
    EP3466650A1|2019-04-10|Device for additive production of three-dimensional objects
    TWI650801B|2019-02-11|Method for forming polysilicon
    KR101814763B1|2018-01-03|Polysilicon depositing method and depositing apparatus therefor
    DE102015224480A1|2017-06-08|Laser Reseal with Voltage Compensation Layer
    Choi et al.2014|3.4 L: Late‐News Paper: Advanced ELA for Large‐Sized AMOLED Displays
    同族专利:
    公开号 | 公开日
    CN105895555A|2016-08-24|
    CN105895555B|2021-09-07|
    DE102015202575A1|2016-08-18|
    TW201705370A|2017-02-01|
    AT516786A3|2021-01-15|
    AT516786B1|2021-05-15|
    TWI703677B|2020-09-01|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    DE4238826C1|1992-11-17|1994-04-28|Microlas Lasersystem Gmbh|Traversing beam high vacuum irradiation chamber - having minimal area beam inlet window and internal beam location device|
    JP3573811B2|1994-12-19|2004-10-06|株式会社半導体エネルギー研究所|Irradiation method of linear laser light|
    JP2001023918A|1999-07-08|2001-01-26|Nec Corp|Semiconductor thin-film forming apparatus|
    JP2002252181A|2001-02-22|2002-09-06|Sanyo Electric Co Ltd|Method of manufacturing polycrystalline semiconductor layer, and laser annealing apparatus|
    US6762072B2|2002-03-06|2004-07-13|Robert Bosch Gmbh|SI wafer-cap wafer bonding method using local laser energy, device produced by the method, and system used in the method|
    US20050189621A1|2002-12-02|2005-09-01|Cheung Kin P.|Processes for hermetically packaging wafer level microscopic structures|
    GB0510873D0|2005-05-27|2005-07-06|Univ Heriot Watt|Laser assisted bonding of surfaces|
    KR100740462B1|2005-09-15|2007-07-18|주식회사 비에스이|Directional silicon condenser microphone|
    US7599048B2|2007-02-09|2009-10-06|Wafermasters, Inc.|Optical emission spectroscopy process monitoring and material characterization|
    KR100859689B1|2007-03-27|2008-09-23|삼성에스디아이 주식회사|Laser annealing apparatus and method for laser annealing|
    CN101301993A|2007-05-11|2008-11-12|北京大学|MEMS device vacuum encapsulation method|
    NL1036460A1|2008-02-20|2009-08-24|Asml Netherlands Bv|Lithographic apparatus and device manufacturing method.|
    CN102530844B|2012-02-03|2015-02-18|厦门大学|Microcomponent vacuum packaging method|
    JP2015084348A|2012-02-13|2015-04-30|長州産業株式会社|Photovoltaic element and method for manufacturing the same|
    TWI582837B|2012-06-11|2017-05-11|應用材料股份有限公司|Melt depth determination using infrared interferometric technique in pulsed laser annealing|
    CN103521919B|2013-10-15|2016-06-22|江苏大学|A kind of method realizing underwater laser welding and laser peening and combination unit|CN110085537B|2019-04-15|2021-09-24|东莞市中镓半导体科技有限公司|Temperature-controllable device for high-temperature laser ablation|
    法律状态:
    优先权:
    申请号 | 申请日 | 专利标题
    DE102015202575.6A|DE102015202575A1|2015-02-12|2015-02-12|Device for processing a substrate|
    [返回顶部]